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o c absolute maximum ratings parameter irhf7130, irhf8130 units i d @ v gs = 12v, t c = 25c continuous drain current 8.0 i d @ v gs = 12v, t c = 100c continuous drain current 5.0 i dm pulsed drain current ? 32 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.20 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 130 mj dv/dt peak diode recovery dv/dt ? 5.5 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. (1.6mm) from case for 10s) weight 0.98 (typical) g product summary part number bv dss r ds(on) i d irhf7130 100v 0.18 w 8.0a irhf8130 100v 0.18 w 8.0a features: n radiation hardened up to 1 x 10 6 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) hardened n neutron tolerant n identical pre- and post-electrical test conditions n repetitive avalanche rating n dynamic dv/dt rating n simple drive requirements n ease of paralleling n hermetically sealed pd - 90653b pre-irradiation 100volt, 0.18 w w w w w , mega rad hard hexfet international rectifiers rad hard technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x10 6 rads(si). under identical pre- and post-irradiation test conditions, in- ternational rectifiers rad hard hexfets retain identical electrical specifications up to 1 x 10 5 rads (si) total dose. no compensation in gate drive circuitry is required. these devices are also capable of surviv- ing transient ionization pulses as high as 1 x 10 12 rads (si)/sec, and return to normal operation within a few microseconds. since the rad hard process utilizes international rectifiers patented hexfet technology, the user can expect the highest quality and reliability in the industry. rad hard hexfet transistors also feature all of the well-established advantages of mosfets, such as voltage control, very fast switching, ease of paral- leling and temperature stability of the electrical pa- rameters. they are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. a repetitive avalanche and dv/dt rated hexfet ? transistor www.irf.com 1 10/14/98 n channel mega rad hard jansh2n7261 irhf7130 JANSR2N7261 irhf8130
2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.10 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.18 v gs = 12v, i d = 5.0a resistance 0.185 v gs = 12v, i d = 8.0a ? v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 2.5 s ( )v ds > 15v, i ds = 5.0a ? i dss zero gate voltage drain current 25 v ds = 0.8 x max rating,v gs =0v 250 v ds = 0.8 x max rating v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 50 v gs =12v, i d = 8.0a q gs gate-to-source charge 12 nc v ds = max rating x 0.5 q gd gate-to-drain (miller) charge 20 t d (on) turn-on delay time 25 v dd = 50v, i d = 8.0a, t r rise time 55 r g = 7.5 w t d (off) turn-off delay time 55 t f fall time 45 l d internal drain inductance 5.0 l s internal source inductance 15 c iss input capacitance 1100 v gs = 0v, v ds = 25v c oss output capacitance 310 pf f = 1.0mhz c rss reverse transfer capacitance 55 pre-irradiation na w ? nh ns m a measured from drain lead, 6mm (0.25 in) from package to center of die. measured from source lead, 6mm (0.25 in) from package to source bonding pad. modified mosfet sym- bol showing the internal inductances. source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 8.0 i sm pulse source current (body diode) ? 32 v sd diode forward voltage 1.5 v t j = 25c, i s = 8.0a, v gs = 0v ? t rr reverse recovery time 350 ns t j = 25c, i f = 8.0a, di/dt 100a/ m s q rr reverse recovery charge 3.0 m cv dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a modified mosfet symbol showing the integral reverse p-n junction rectifier. thermal resistance parameter min typ max units test conditions r thjc junction-to-case 5.0 r th-ja junction-to-ambient 175 typical socket mount w c/w irhf7130, irhf8130,jansr-,jansh-,2n7261 devices
www.irf.com 3 radiation performance of rad hard hexfets table 1. low dose rate ? ? irhf7130 irhf8130 parameter 100k rads (si) 1000k rads (si) units test conditions ? min max min max bv dss drain-to-source breakdown voltage 100 100 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage ? 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 50 a v ds =0.8 x max rating, v gs =0v r ds(on)1 static drain-to-source ? 0.18 0.24 w v gs = 12v, i d = 5.0a on-state resistance one v sd diode forward voltage ? 1.5 1.5 v t c = 25c, i s =8.0a,v gs = 0v international rectifier radiation hardened hexfets are tested to verify their hardness capability. the hard- ness assurance program at international rectifier comprises three radiation environments. every manufacturing lot is tested in a low dose rate (total dose) environment per mil-std-750, test method 1019 condition a. international rectifier has imposed a standard gate condition of 12 volts per note 5 and a v ds bias condition equal to 80% of the device rated voltage per note 6. pre- and post- irra- diation limits of the devices irradiated to 1 x 10 5 rads (si) are identical and are presented in table 1, col- umn 1, irhf7130. post-irradiation limits of the devices irradiated to 1 x 10 6 rads (si) are presented in table 1, column 2, irhf8130. the values in table 1 will be met for either of the two low dose rate test circuits that are used. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct com- parison. high dose rate testing may be done on a special request basis using a dose rate up to 1 x 10 12 rads (si)/sec (see table 2) international rectifier radiation hardened hexfets have been characterized in heavy ion single event effects (see) environments. single event effects char- acterization is shown in table 3. radiation characteristics table 2. high dose rate ? 10 11 rads (si)/sec 10 12 rads (si)/sec parameter min typ max min typ max units test conditions v dss drain-to-source voltage 80 80 v applied drain-to-source voltage during gamma-dot i pp 100 100 a peak radiation induced photo-current di/dt 800 160 a/sec rate of rise of photo-current l 1 0.1 0.5 h circuit inductance required to limit di/dt table 3. single event effects let (si) fluence range v ds bias v gs bias ion (mev/mg/cm 2 ) (ions/cm 2 ) (m) (v) (v) cu 28 3x 10 5 ~43 100 -5 irhf7130, irhf8130, jansr-,jansh-,2n7261 devices
4 www.irf.com fig 2. typical response of on-state resistance vs. total dose exposure fig 1. typical response of gate threshhold voltage vs. total dose exposure fig 3. typical response of transconductance vs. total dose exposure fig 4. typical response of drain to source breakdown vs. total dose exposure post-irradiation irhf7130, irhf8130,jansr-,jansh-,2n7261 devices
www.irf.com 5 post-irradiation fig 6. typical on-state resistance vs. neutron fluence level fig 5. typical zero gate voltage drain current vs. total dose exposure fig 8b. v dss stress equals 80% of b vdss during radiation fig 9. high dose rate (gamma dot) test circuit fig 7. typical transient response of rad hard hexfet during 1x10 12 rad (si)/sec exposure irhf7130, irhf8130,jansr-,jansh-,2n7261 devices fig 8a. gate stress of v gss equals 12 volts during radiation
6 www.irf.com radiation characterstics fig 11. typical output characteristics post-irradiation 100k rads (si) fig 10. typical output characteristics pre-irradiation fig 12. typical output characteristics post-irradiation 300k rads (si) fig 13. typical output characteristics post-irradiation 1 mega rads(si) note: bias conditions during radiation: v gs = 12 vdc, v ds = 0 vdc irhf7130, irhf8130, jansr-,jansh-,2n7261 devices
www.irf.com 7 fig 16. typical output characteristics post-irradiation 300k rads (si) fig 17. typical output characteristics post-irradiation 1 mega rads(si) fig 14. typical output characteristics pre-irradiation fig 15. typical output characteristics post-irradiation 100k rads (si) note: bias conditions during radiation: v gs = 0 vdc, v ds = 80 vdc radiation characterstics irhf7130, irhf8130, jansr-,jansh-,2n7261 devices
8 www.irf.com pre-irradiation fig 19. typical output characteristics fig 18. typical output characteristics fig 21. normalized on-resistance vs. temperature fig 20. typical transfer characteristics irhf7130, irhf8130,jansr-,jansh-,2n7261 devices
www.irf.com 9 pre-irradiation fig 23. typical gate charge vs. gate-to-source voltage fig 22. typical capacitance vs. drain-to-source voltage fig 25. maximum safe operating area fig 24. typical source-drain diode forward voltage irhf7130, irhf8130,jansr-,jansh-,2n7261 devices 30
10 www.irf.com pre-irradiation fig 27a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 27b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 12v + - v dd fig 28. maximum effective transient thermal impedance, junction-to-case fig 26. maximum drain current vs. case temperature irhf7130, irhf8130,jansr-,jansh-,2n7261 devices
www.irf.com 11 pre-irradiation q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 30b. gate charge test circuit fig30a. basic gate charge waveform fig 29c. maximum avalanche energy vs. drain current fig 29b. unclamped inductive waveforms fig 29a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 12v irhf7130, irhf8130,jansr-,jansh-,2n7261 devices
12 www.irf.com ? repetitive rating; pulse width limited by maximum junction temperature. refer to current hexfet reliability report. ? v dd = 25v, starting t j = 25c, peak i l = 8.0a,l>3.0mh r g =25 w ? i sd 8.0a, di/dt 140a/ m s, v dd bv dss , t j 150c suggested rg =7.5 w ? pulse width 300 m s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, codition a. ? total dose irradiation with v ds bias. v ds = 0.8 rated bv dss (pre-radiation) applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? this test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 mev), 30 nsec pulse. ? all pre-irradiation and post-irradiation test conditions are identical to facilitate direct comparison for circuit applications. pre-irradiation ? see figures 18 through 30 for pre-radiation curves case outline and dimensions to-205af (modified to-39) all dimensions are shown millimeters (inches) world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 10/98 irhf7130, irhf8130,jansr-,jansh-,2n7261 devices

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